| Mfg Part Number: 2N4066 | NSN : 5961-00-435-3725 | NIIN : 004353725 |
| CAGE Code : 15818 | Manufacturer: Telcom Semiconductor Inc | Item Name : Semiconductor Devices Unitized |
| FSC : 5961 Semiconductor Devices and Associated Hardware |
When you need top quality NSN parts that you can steadily rely on, let the experts at Stacked NSN help you secure all you need with competitive pricing and rapid lead-times. NSN 5961-00-435-3725 is listed with the part number 2N4066 and was manufactured by Telcom Semiconductor Inc. If you are interested in purchasing our available Semiconductor Devices Unitized, fill out and submit the RFQ form as provided below for the part number 2N4066. and a dedicated account manager will reach out to you in as little as 15 minutes or less. As you complete our request form, we ask that you offer us as much information as you can so that we may best accommodate your needs.
This Telcom Semiconductor Inc NSN part was produced under the CAGE Code 15818, and customers can find all the NSNs that they require with ease by utilizing our search engine and filters. NSNs, or National Stock Numbers, are 13-digit numeric codes assigned to ‘standardized material items of supply’ for ease of trade. The NSN system is practiced by all NATO members and other participating countries, and such codes help identify the part’s country of origin, FSG, FSC, and more. Get started on the purchasing process for NSN 5961-00-435-3725 and other items you need today and see why customers choose to steadily rely on Stacked NSN for all their needs.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-00-435-3725 Item Description: SEMICONDUCTOR DEVICES,UNITIZED | 5961 | 004353725 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | U | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 2N4066 | 3 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| CTRD | POWER RATING PER CHARACTERISTIC | 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| ADAV | OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| ABHP | OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE5275 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-76 |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| ASKA | COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 8 UNINSULATED WIRE LEAD |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
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