Mfg Part Number: MEM556C | NSN : 5961-00-194-8779 | NIIN : 001948779 |
CAGE Code : 14936 | Manufacturer: General Semiconductor Inc | Item Name : Transistor |
FSC : 5961 Semiconductor Devices and Associated Hardware |
When you need top quality NSN parts that you can steadily rely on, let the experts at Stacked NSN help you secure all you need with competitive pricing and rapid lead-times. NSN 5961-00-194-8779 is listed with the part number MEM556C and was manufactured by General Semiconductor Inc. If you are interested in purchasing our available Transistor, fill out and submit the RFQ form as provided below for the part number MEM556C. and a dedicated account manager will reach out to you in as little as 15 minutes or less. As you complete our request form, we ask that you offer us as much information as you can so that we may best accommodate your needs.
This General Semiconductor Inc NSN part was produced under the CAGE Code 14936, and customers can find all the NSNs that they require with ease by utilizing our search engine and filters. NSNs, or National Stock Numbers, are 13-digit numeric codes assigned to ‘standardized material items of supply’ for ease of trade. The NSN system is practiced by all NATO members and other participating countries, and such codes help identify the part’s country of origin, FSG, FSC, and more. Get started on the purchasing process for NSN 5961-00-194-8779 and other items you need today and see why customers choose to steadily rely on Stacked NSN for all their needs.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-00-194-8779 Item Description: Transistor | 5961 | 001948779 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | U | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Mem556c | 3 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -10.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND -10.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 MILLIAMPERES MAXIMUM DRAIN CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 100.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS JUNCTION |
FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PN |
TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
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